The SSG9685 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 6.20 5.80 0.25 0.40.
* Fast Switching Characteristic
* Simple Drive Requirement
* Low Gate Charge
* RoHS Compliant
Date Code D1 8 D1 7 D2 6 D2 5
0 o 8
o
1.35 1.75
Dimensions in millimeters
D
9685SC
G
1 S1
2 G1
3 S2
4 G2
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
80
±20 5.3 3.4 50 2.5 0.02
Unit
V V A A A W
W/ C
o o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG9410 |
SeCoS |
N-channel MOSFET | |
2 | SSG9435 |
SeCoS |
P-Channel MOSFET | |
3 | SSG9435BDY |
SeCoS |
P-Channel MOSFET | |
4 | SSG9435J-C |
SeCoS |
P-Channel MOSFET | |
5 | SSG9435P |
SeCoS |
P-Channel MOSFET | |
6 | SSG9475 |
SeCoS |
N-channel MOSFET | |
7 | SSG9478 |
SeCoS |
N-channel MOSFET | |
8 | SSG9563 |
SeCoS |
P-Channel MOSFET | |
9 | SSG9575 |
SeCoS |
P-Channel MOSFET | |
10 | SSG9922E |
SeCoS |
N-channel MOSFET | |
11 | SSG9926J-C |
SeCoS |
Dual N-Channel Enhancement Mode Power MOSFET | |
12 | SSG9926N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET |