It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID.
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF3341UP
D G
Marking and Pin Assignments
S
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSF3341 |
Silikron Semiconductor |
MOSFET | |
2 | SSF3341 |
GOOD-ARK |
P-Channel MOSFET | |
3 | SSF3341L |
Silikron Semiconductor |
MOSFET | |
4 | SSF3341L |
GOOD-ARK |
P-Channel MOSFET | |
5 | SSF3344 |
Silikron Semiconductor Co |
MOSFET | |
6 | SSF3314E |
Silikron Semiconductor |
MOSFET | |
7 | SSF3314E |
GOOD-ARK |
N-Channel MOSFET | |
8 | SSF3322 |
Silikron Semiconductor |
MOSFET | |
9 | SSF3324 |
Silikron Semiconductor Co |
MOSFET | |
10 | SSF3324 |
GOOD-ARK |
N-Channel MOSFET | |
11 | SSF3338 |
Silikron Semiconductor Co |
MOSFET | |
12 | SSF3338 |
GOOD-ARK |
N-Channel MOSFET |