SSF3115H1 - Silikron

SSF3115H1 MOSFET

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable devicefor use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TA = 25°C I.

Features

Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSF3115H1 Pin Assignments Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable devicefor use in power switching application and a wide variety of other applications. Ab.