SSF3108J2 - Silikron

SSF3108J2 MOSFET

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in battery charge and load switching in cellular handset and a wide variety of other ultraportable applications.

Features

 Advanced trench MOSFET process technology
 Special designed for battery charge, load switching in cellular handset and general ultraportable applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature SSF3108J2 Schematic Diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in battery charge and load switc.