SSF2445CU - Silikron

SSF2445CU MOSFET

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in load switching and a wide variety of other applications Absolute Max Rating Symbol ID @ TC = 25°C IDM PD @T.

Features

 Advanced trench MOSFET process technology
 Special designed for load switching and buttery protection applications
 150°C operating temperature Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in load switching and a wide variety of other applications Absolute Max Rating Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 4.5V ① Pulse.