SSF2429UP - Silikron

SSF2429UP MOSFET

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute Max Rating: Symbol ID @ TC =.

Features

SOT23-6
◼ Advanced trench MOSFET process technology
◼ Special designed for PWM, load switching and general purpose applications
◼ Ultra low on-resistance with low gate charge
◼ Fast switching and reverse body recovery
◼ 150℃ operating temperature SSF2429UP Marking and Pin Assignment D G S Schematic Diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching appli.