SSD02N60J-C - SeCoS

SSD02N60J-C N-Ch Enhancement Mode Power MOSFET

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed .

Features

 Robust high voltage termination
 Avalanche energy specified
 Source-to-drain diode recovery time comparable to a discrete fast recovery diode
 Diode is characterized for the use in bridge circuits
 IDSS and VDS are specified at the elevated temperature PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch  Drain ORDER INFORMATION Part Number Type  Gate SSD02N60J-C Lead (Pb)-free and Halogen-free
 Source TO-252 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.50 6.70 J 2.186 2.386 B 5.10 5.46 K 0.67 1.00 C 2.20 2.40 M 0.6 0.77 D 0.46 0.58 N 1..