SSCP005GN3 - AFSEMI

SSCP005GN3 High Frequency High Gain PNP Power BJT

This device is produced with advanced high carrier density technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.

Features

PNP BJT VCE -40v VBE -6v Vcesat typ -150mv Ic -3A
 Applications
 battery powered circuits
 low in-line power dissipation circuits
 Pin configuration
 General Description This device is produced with advanced high carrier density technology, which is especially used to minimize saturation voltage drop. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
 Package.