SQD50P04-13L - Vishay

SQD50P04-13L Automotive P-Channel MOSFET

OF CHANGE D 12-Dec-14 • ID and PD (TC = 125 °C), UIS, RthJC, RDS(on) (VGS = 10 V for TJ = 125 °C and 175 °C) and gfs modified Note a. As of April 2014 S14-2536-Rev. D, 29-Dec-14 7 Document Number: 65157 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT.

Features

• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified d
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S G S D G Top View P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD50P04-13L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse A.