www.vishay.com SQD50N03-06P Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-252 30 0.0060 0.0085 50 Single D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • AEC-Q101 Qualified • Material categorization: For definitions of c.
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
G
GDS Top View
Drain Connected to Tab
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
TO-252 SQD50N03-06P-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
IS IDM
Single Pulse Aval.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SQD50N04-09H |
Vishay |
Automotive N-Channel MOSFET | |
2 | SQD50N04-3m5L |
Vishay |
Automotive N-Channel MOSFET | |
3 | SQD50N04-5m6 |
Vishay |
Automotive N-Channel MOSFET | |
4 | SQD50N05-11L |
Vishay |
Automotive N-Channel MOSFET | |
5 | SQD50N06-09L |
Vishay |
Automotive N-Channel MOSFET | |
6 | SQD50N10-8m9L |
Vishay |
Automotive N-Channel MOSFET | |
7 | SQD50 |
Sansha |
MOSFET / Transisters / FRD | |
8 | SQD50AB100 |
Sansha |
Transistor Module | |
9 | SQD50P03-07 |
Vishay |
Automotive P-Channel MOSFET | |
10 | SQD50P04-09L |
Vishay |
Automotive P-Channel MOSFET | |
11 | SQD50P04-13L |
Vishay |
Automotive P-Channel MOSFET | |
12 | SQD50P06-15L |
Vishay |
Automotive P-Channel 60V (D-S) MOSFET |