TRANSISTOR MODULE SQD200A40/60 UL;E76102 M SQD200A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 200A, VCEX 400/600V Low saturatio.
ue TC 25 =pw 1ms VBE 2V Conditions Tj 25 unless otherwise specified Ratings Unit V V V A A A W 150 125 V N m ( f B) g SQD200A40 SQD200A60 400 400 10 200 400 200 12 1250 40 to 40 to 2500 2.7 28 2.7 28 380 600 600 Electrical Characteristics Symbol ICBO IEBO VCEO VCEX SUS Item Collector Cut-off Current Emitter Cut-off Current SQD200A40 Collector Emitter Sustaning Voltage SQD200A60 SQD200A40 SQD200A60 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SQD200A60 |
ETC |
TRANSISTOR MODULE | |
2 | SQD23N06-31L |
Vishay |
Automotive N-Channel MOSFET | |
3 | SQD25N06-22L |
Vishay |
Automotive N-Channel MOSFET | |
4 | SQD25N15-52 |
Vishay |
Automotive N-Channel MOSFET | |
5 | SQD-605 |
SAQCN |
MULTI WAY LED BACKLIGHT CONVERTER | |
6 | SQD07N25-350H |
Vishay |
Automotive N-Channel MOSFET | |
7 | SQD100N03-3M2L |
Vishay |
Automotive N-Channel MOSFET | |
8 | SQD100N03-3M4 |
Vishay |
Automotive N-Channel MOSFET | |
9 | SQD100N04-3m6 |
Vishay |
Automotive N-Channel MOSFET | |
10 | SQD100N04-3m6L |
Vishay |
Automotive N-Channel MOSFET | |
11 | SQD10N30-330H |
Vishay |
Automotive N-Channel MOSFET | |
12 | SQD15N06-42L |
Vishay |
Automotive N-Channel 60V (D-S) MOSFET |