SQD100N03-3M2L - Vishay

SQD100N03-3M2L Automotive N-Channel MOSFET

www.vishay.com SQD100N03-3m2L Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-252 30 0.0032 0.0039 100 Single D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Material categorization: For definitions o.

Features

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G GDS Top View Drain Connected to Tab S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD100N03-3m2L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maxi.