Data Sheet No. 2C2904A Chip Type 2C2904A Geometry 0600 Polarity PNP Generic Packaged Parts: 2N2904A Chip type 2C2904A by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N2904A, 2N2904, 2N2906A, 2N2906, 2N2904AUB, SD2904A, SD2904AF, SQ2904A, SQ2904AF, 2N3485, 2N3485A Product Summary: APPLICATIONS: Designed for general .
Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 18 kÅ min. Au - 6.5 kÅ nom. 4.0 mils x 4.0 mils 4.0 mils x 4.0 mils 8 mils nominal 20 mils x 20 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCEO BVCBO BVEBO ICBO Test conditions IC = 10.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 50 V, IE = 0 Min 60 60 5.0 --- Max ------10 Unit V dc V dc V dc nA hFE IC = 150 mA dc, VCE = 10 V 40 120 --Due to limitations of probe testing, only dc parameters are tested. This must be done with p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SQ2904AF |
Semicoa Semiconductor |
Chip Type 2C2904A Geometry 0600 Polarity PNP | |
2 | SQ2907A |
Semicoa Semiconductor |
Chip Type 2C2907A Geometry 0600 Polarity PNP | |
3 | SQ2907AF |
Semicoa Semiconductor |
Chip Type 2C2907A Geometry 0600 Polarity PNP | |
4 | SQ201 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
5 | SQ202 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
6 | SQ2222A |
Semicoa Semiconductor |
Chip Type 2C2222A Geometry 0400 Polarity NPN | |
7 | SQ2222AF |
Semicoa Semiconductor |
Chip Type 2C2222A Geometry 0400 Polarity NPN | |
8 | SQ2301CES |
Vishay |
Automotive P-Channel MOSFET | |
9 | SQ2301ES |
Vishay |
Automotive P-Channel MOSFET | |
10 | SQ2303ES |
Vishay |
Automotive P-Channel MOSFET | |
11 | SQ2308BES |
FreesCale Electronics |
Automotive N-Channel MOSFET | |
12 | SQ2308CES |
Vishay |
Automotive N-Channel MOSFET |