Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM S.
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 3.0 A RF CHARACTERISTICS ( SYMBOL Gp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SQ201 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
2 | SQ2222A |
Semicoa Semiconductor |
Chip Type 2C2222A Geometry 0400 Polarity NPN | |
3 | SQ2222AF |
Semicoa Semiconductor |
Chip Type 2C2222A Geometry 0400 Polarity NPN | |
4 | SQ2301CES |
Vishay |
Automotive P-Channel MOSFET | |
5 | SQ2301ES |
Vishay |
Automotive P-Channel MOSFET | |
6 | SQ2303ES |
Vishay |
Automotive P-Channel MOSFET | |
7 | SQ2308BES |
FreesCale Electronics |
Automotive N-Channel MOSFET | |
8 | SQ2308CES |
Vishay |
Automotive N-Channel MOSFET | |
9 | SQ2308ES |
VISHAY |
Automotive N-Channel MOSFET | |
10 | SQ2309ES |
Vishay |
Automotive P-Channel MOSFET | |
11 | SQ2310ES |
Vishay |
Automotive N-Channel MOSFET | |
12 | SQ2315ES |
Vishay |
Automotive P-Channel MOSFET |