The SPP4435W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered ci.
-30V/-9.2A,RDS(ON)=24mΩ@VGS=-10V -30V/-7.0A,RDS(ON)=30mΩ@VGS=-4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOP
–8 package design
PIN CONFIGURATION(SOP
–8)
PART MARKING
2020/03/23 Ver.3
Page 1
SPP4435W
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
ORDERING INFORMATION
Part Number
Package
SPP4435WS8RGB
SOP-8
※ SPP4435WS8RGB : 13”Tape Reel ; Pb
– Free; Halogen
– Free
ABSOULTE MAXIMUM RATING.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP4435 |
SYNC POWER |
P-Channel MOSFET | |
2 | SPP4435B |
SYNC POWER |
P-Channel MOSFET | |
3 | SPP4403 |
SYNC POWER |
P-Channel MOSFET | |
4 | SPP42N03S2L-13 |
Infineon Technologies AG |
OptiMOS Power-Transistor | |
5 | SPP46N03 |
Infineon Technologies |
SIPMOS Power Transistor | |
6 | SPP46N03L |
Infineon Technologies |
SIPMOS Power Transistor | |
7 | SPP47N10 |
Infineon Technologies AG |
SIPMOS Power-Transistor | |
8 | SPP47N10L |
Infineon Technologies AG |
SIPMOS Power-Transistor | |
9 | SPP4925 |
SYNC POWER |
P-Channel MOSFET | |
10 | SPP4925B |
SYNC POWER |
P-Channel MOSFET | |
11 | SPP4925W |
SYNC POWER |
P-Channel MOSFET | |
12 | SPP4931 |
SYNC POWER |
P-Channel MOSFET |