The SPP4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered cir.
-30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V -30V/-7.0A,RDS(ON)= 35mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP
– 8P package design
PIN CONFIGURATION(SOP
– 8P)
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PART MARKING
2008/12/01
Ver.2
Page 1
SPP4435
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin 1 2 3 4 5 6 7 8
ORDERING INFORMATION Part Number SPP4435S8RG SPP4435S8RGB
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
Package SOP- 8P SOP- 8P
Part
Marking
SPP4435 SPP4435
※ SP.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP4435B |
SYNC POWER |
P-Channel MOSFET | |
2 | SPP4435W |
SYNC POWER |
P-Channel MOSFET | |
3 | SPP4403 |
SYNC POWER |
P-Channel MOSFET | |
4 | SPP42N03S2L-13 |
Infineon Technologies AG |
OptiMOS Power-Transistor | |
5 | SPP46N03 |
Infineon Technologies |
SIPMOS Power Transistor | |
6 | SPP46N03L |
Infineon Technologies |
SIPMOS Power Transistor | |
7 | SPP47N10 |
Infineon Technologies AG |
SIPMOS Power-Transistor | |
8 | SPP47N10L |
Infineon Technologies AG |
SIPMOS Power-Transistor | |
9 | SPP4925 |
SYNC POWER |
P-Channel MOSFET | |
10 | SPP4925B |
SYNC POWER |
P-Channel MOSFET | |
11 | SPP4925W |
SYNC POWER |
P-Channel MOSFET | |
12 | SPP4931 |
SYNC POWER |
P-Channel MOSFET |