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· Ultra low gate charge · Ultra low effective capacitance · Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 24.3 IDM Drain Current-Single Pulsed 72.9 PD Total Dissipation @TC=25℃ 240 Tj Max. Operating Junction Temperat.
·Static drain-source on-resistance:
RDS(on) ≤0.16Ω
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
· Ultra low gate charge
· Ultra low effective capacitance
· Improved transconductance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
24.3
IDM
Drain Current-Single Pulsed
72.9
PD
Total Dissipation @TC=25℃
240
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temp.
SPP24N60C3 - Infineon Technologies
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP24N60CFD |
Infineon Technologies |
Power Transistor |
|
| 2 | SPP24N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPP2095 |
SYNC Power |
P-Channel MOSFET |
|
| 4 | SPP20N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 5 | SPP20N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 6 | SPP20N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | SPP20N60CFD |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 8 | SPP20N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 9 | SPP20N60S5 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 10 | SPP20N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | SPP20N65C3 |
Infineon Technologies |
Power Transistor |
|
| 12 | SPP20N65C3 |
INCHANGE |
N-Channel MOSFET |
|