SPP20N65C3 - Infineon Technologies

SPP20N65C3 Power Transistor

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG-TO262 PG-TO220FP 650 0.19 20.7 PG-TO220.

Features

tage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 208 34.5 Operating and storage temperature Rev. 3.1 Page 1 T j , Tstg -55...+150 °C 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 20.7 A, T j = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD versi.