SPN03N60S5 - Infineon Technologies

SPN03N60S5 Cool MOS Power Transistor

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.

Features

on PCB: @ min. footprint @ 6 cm2 cooling area 1) - 25 110 - 62 70 K/W Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=135µΑ, VGS=V DS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Values typ. 700 4.5 0.5 1.26 3.4 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=3.2A µA 1 50 100 1.4 nA Ω Gate-source.