and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
ion, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=135µΑ, VGS=V DS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C Symbol min. RthJS RthJA - Values typ. 25 110 max. 70 Unit K/W Values typ. 700 3 0.5 1.26 3.8 10 max. 3.9 600 2.1 - Unit V V(BR)DS VGS=0V, ID=3.2A µA 1 70 100 1.4 nA Ω Gate-source leakage current IGSS VGS=30V,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPN03N60S5 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPN01N60C3 |
Infineon |
Cool MOS Power Transistor | |
3 | SPN01N60S5 |
Infineon Technologies |
Cool MOS Power-Transistor | |
4 | SPN02N60C3 |
Infineon Technologies |
Power Transistor | |
5 | SPN02N60S5 |
Infineon Technologies |
Power Transistor | |
6 | SPN04N60C2 |
Infineon |
Cool MOS Power Transistor | |
7 | SPN04N60S5 |
Infineon |
Cool MOS Power Transistor | |
8 | SPN05T10 |
SYNC POWER |
N-Channel MOSFET | |
9 | SPN09T10 |
SYNC POWER |
N-Channel MOSFET | |
10 | SPN100T12 |
SYNC POWER |
N-Channel MOSFET | |
11 | SPN100T12 |
SYNC POWER |
N-Channel MOSFET | |
12 | SPN1012 |
SYNC POWER |
N-Channel MOSFET |