SPI08N80C3 - Infineon Technologies

SPI08N80C3 Power Transistor

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPI08N80C3 800 V .

Features

• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPI08N80C3 800 V 0.65 Ω 45 nC PG-TO262-3 CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward ) Type SPI08N80C3 Package PG-TO262-3 Marking 08N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Pa.