SPI07N60C3 - Infineon Technologies

SPI07N60C3 Power Transistor

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • High peak current capability • Improved transconductance 1 23 P-TO220-3-31 P-TO220-3-1.

Features

perature Reverse diode dv/dt 6) Symbol ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 7.3 4.6 21.9 230 7.31) 4.61) 21.9 230 0.5 0.5 7.3 7.3 ±20 ±20 ±30 ±30 83 32 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.2 Rev. 3.3 Page 1 Page 1 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junc.