isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-S.
·Static drain-source on-resistance:
RDS(on)≤7.3mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Superior thermal resistance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
200
PD
Total Dissipation @TC=25℃
136
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD50N03S2-07 |
Infineon Technologies |
Power-Transistor | |
2 | SPD50N03S2-07G |
Infineon |
Power-Transistor | |
3 | SPD50N03S2L-06 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPD50N06S2-14 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPD50N06S2L-13 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPD50N06S2L-13 |
Infineon |
Power Transistor | |
7 | SPD50 |
SSDI |
HYPER FAST RECTIFIER | |
8 | SPD502 |
SSDI |
(SPD502 - SPD506) HYPER FAST RECTIFIER | |
9 | SPD502SMS |
SSDI |
HYPER FAST RECTIFIER | |
10 | SPD503 |
SSDI |
(SPD502 - SPD506) HYPER FAST RECTIFIER | |
11 | SPD503SMS |
SSDI |
HYPER FAST RECTIFIER | |
12 | SPD504 |
SSDI |
(SPD502 - SPD506) HYPER FAST RECTIFIER |