SPD50N03S2 |
Part Number | SPD50N03S2 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
Features |
·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 136 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER R... |
Document |
SPD50N03S2 Data Sheet
PDF 239.39KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD50N03S2-07 |
Infineon Technologies |
Power-Transistor | |
2 | SPD50N03S2-07G |
Infineon |
Power-Transistor | |
3 | SPD50N03S2L-06 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPD50N06S2-14 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPD50N06S2L-13 |
Infineon Technologies |
OptiMOS Power-Transistor |