SPD11N10 - Infineon Technologies

SPD11N10 SIPMOS Power-Transistor

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. SPD11N10 SPU11N10 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technica.

Features

esistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPD11N10 SPU11N10 Values min. typ. max. 3 100 75 50 K/W Unit Symbol RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = 21 µA Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25°C VDS =100V, VGS =0V, Tj =125°C µA 0.01 1 1 137 1 100.