SPD10N10 - Infineon Technologies

SPD10N10 SIPMOS Power Transistor

Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 10N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.2 10 V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type SPD10N10 SPU10N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S .

Features

• N channel
• SPD 10N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.2 10 V Ω A Enhancement mode
• Avalanche rated
• dv/dt rated Type SPD10N10 SPU10N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4119-A2 Tape and Reel Q67040-S4111-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 10 6.3 40 59 4 6 ±20 40 -55... +175 55/150/56 kV/µs V W ˚C mJ Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS E.