Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
·With TO-263( D²PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
11.6
PD
Total Dissipation @TC=25℃
125
Tj
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A W ℃ ℃
SPB12N50C3
·THER.
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
2 | SPB100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
3 | SPB100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPB100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPB100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPB100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPB100N04S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPB100N04S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPB100N06S2-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
10 | SPB100N06S2-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
11 | SPB100N06S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
12 | SPB100N06S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor |