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SPB12N50C3 |
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| Part Number | SPB12N50C3 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr... |
| Features |
s Parameter Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10s 4)
Symbol
RthJC RthJC_FP RthJA RthJA_FP RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
3.8
-
-
62
-
-
8... |
| Document |
 SPB12N50C3 Data Sheet
PDF 1.65MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB12N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPB100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 3 | SPB100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 4 | SPB100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 5 | SPB100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|