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SPA04N80C3 - Infineon

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SPA04N80C3 CoolMOS Power Transistor

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed fo.

Features


• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward ) Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPA04N80C3 800 V 1.3 Ω 23 nC Type SPA04N80C3 Package PG-TO220-3 Marking 04N80C3 Maximum ratings, at T j=25 °C.

The same part from a different manufacturer

Datasheet SPA04N80C3 - INCHANGE SPA04N80C3

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Stan.

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