SP8076EL - SamHop Microelectronics

SP8076EL N-Channel Enhancement Mode Field Effect Transistor

Green Product SP8076EL Ver 1.4 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 33V ID 27A R DS(ON) (m Ω) Typ 4.0 @ VGS=10V 4.5 @ VGS=6V 5.5 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed ac c Limit 33 ±20 Units V V A A W °C TA=25°C TA=25°C 27 81 1.67 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subjec.