SP8075E - SamHop Microelectronics

SP8075E N-Channel Enhancement Mode Field Effect Transistor

Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SP8075E Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 3.0 @ VGS=10V 30V 30A 3.8 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIM.

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C IDM -Pulsed a c PD Maximum Power Dissipation TA=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 4G 3S 2S 1S Limit 30 ±20 30 90 1.67 -55 to 150 75 Units V V A A W °C °C/W Details are subject to chang.