SP2030 - SamHop Microelectronics

SP2030 Dual N-Channel Enhancement Mode Field Effect Transistor

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2030 Ver 2.1 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mΩ) Max 5.5 @ VGS=4.5V 6.5 @ VGS=3.9V 46A 7.0 @ VGS=3.1V 7.5 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1/D2 DFN 3X3 .

Features

Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1/D2 DFN 3X3 PIN 1 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case Limit 20 ±12 46 36.8 96 15.6 10.0 -55 to 150 8 Units V V A A A W W °C °C/W Details are sub.