Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM S.
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 20 Watts Junction to Case Thermal Resistance o 10.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 1.2 A RF CHARACTERISTICS ( SYMBOL G.
SP201 is a high performance current mode PWM controller for offline flyback converter applications. The IC has built-in .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SP200 |
Sipex |
+5V High-Speed RS-232 Transceivers with 0.1mF Capacitors | |
2 | SP200F |
VMI |
(SP200F / SP250F) Rectifier Stacks | |
3 | SP200S |
VMI |
(SP200S / SP250S) Rectifier Stacks | |
4 | SP20100R |
SeCoS |
20.0 Amp Schottky Barrier Rectifiers | |
5 | SP2013 |
SamHop |
P-Channel Enhancement Mode Field Effect Transistor | |
6 | SP20150 |
SeCoS |
VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers | |
7 | SP20150R |
SeCoS |
20.0 Amp Schottky Barrier Rectifiers | |
8 | SP202 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | |
9 | SP2026 |
Sipex |
+2.7V to +5.5V USB Power Control Switch | |
10 | SP202E |
MaxLinear |
High Performance RS-232 Line Drivers / Receivers | |
11 | SP202E |
Exar |
High Performance RS-232 Line Drivers/Receivers | |
12 | SP203 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |