SMW60N10 - TEMIC

SMW60N10 N-Channel MOSFET

TEMIC Siliconix N-Channel Enhancement-Mode TI:ansistor SMW60NIO Product Summary V(BR)DSS (V) 100 rDS(ou) (Q) 0.025 ID (A) 60 D TO·247AD )0 I lI G DS Top View S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energ.

Features

ndition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward nansconductanceb Dynamic V(BR)DSS VOS(tb) loss IDSS ID(on) 'DS(on) !lis Vos = ov, ID = 250J1A VDS = Vos. ID = 250 J1A VDS = Ov, Vos = ±20V VDS - SO V, Vos - OV VDS = SO V, VOS = Ov, TJ = 125°C VDs=5V, Vos=10V Vos= lOV,ID =37 A Vos = 10 V, ID = 37 A, TJ = 125°C VDS = 10 V, ID = 37 A Input Capacitance Output Capacitance Reverse nansfer Capacitance C;" Co .. Vos = OV,VDS = 25V,f= 1 MHz c", Thtal Gate Char.