SMW60N06-18 - TEMIC

SMW60N06-18 N-Channel MOSFET

TEMIC Siliconix SMW60N06·18 N-Channel Enhancement-Mode Transistor, 1S-mQ rDS(on) Product Summary V(BR)OSS (V) 60 rOS(on) (0) 0.018 TO-247AD DOl l 10 (A) 60 o Go-J GDS ThpView S N·Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Parameter Symbol limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur.

Features

ns (TJ = 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward'Iransconductanceb Dynamic V(BR)DSS VOS(th) loss loss lo(on) roS(on) Sf. Vos = ov, 10 = 2S0IJA Vos - Vos, 10 -lmA Vos = OV,Vos = ±20V Vos = 48 V, Vos = OV Vos = 48 V, Vos = 0 V, TJ = 125°C Vos = 10V, Vos = 10V Vos = 10V, 10 = 30A Vos = 10 V, 10 = 30 A, TJ - 125°C Vos = 15 V, 10 = 30A Input Capacitance Cj" Output Capacitance c... Reverse 'fra.