SMK0465IS - KODENSHI KOREA

SMK0465IS Advanced N-Ch Power MOSFET

SMK0465IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-source breakdown voltage: BVDSS=650V • Low gate charge: Qg=11.2nC (Typ.) • Low drain-source On-resistance: RDS(on)=3Ω (Max.) • RoHS compliant device • Halogen free package Ordering Information Part Number Marking Package SMK0465IS SMK0465 I-PAK (Short lead) GDS I-.

Features

• Drain-source breakdown voltage: BVDSS=650V
• Low gate charge: Qg=11.2nC (Typ.)
• Low drain-source On-resistance: RDS(on)=3Ω (Max.)
• RoHS compliant device
• Halogen free package Ordering Information Part Number Marking Package SMK0465IS SMK0465 I-PAK (Short lead) GDS I-PAK (Short Lead) Marking Information SMK 0465 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC)
* Drain current (Pulsed).