SMG120NA0EF - Silikron

SMG120NA0EF IGBT

Main Product Characteristics: VCES 1250 V IC 100 A VCE(sat) 1.75 V TO-247PLUS-4L Features and Benefits:  Trench FS technology offering  High speed switching  Low gate charge and VCE(sat)  High ruggedness, temperature stable behavior  Maximum junction temperature 175°C Applications:  Solar inverters  Uninterruptible power supplies  Motor driv.

Features

 Trench FS technology offering
 High speed switching
 Low gate charge and VCE(sat)
 High ruggedness, temperature stable behavior
 Maximum junction temperature 175°C Applications:
 Solar inverters
 Uninterruptible power supplies
 Motor drives
 Air condition SMG120NA0EF G:Gate E:Emitter K:Kelvin Emitter C:Collector Schematic Diagram Absolute Max Rating: Symbol VCES VGES IC ICpuls IF IFM PD TJ TSTG TL Parameter Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current，tp limited by Tjmax Turn off safe operating area，VC.