www.DataSheet4U.com SM16(G,J)48,USM16(G,J)48,SM16(G,J)48A,USM16(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G48,USM16G48,SM16J48,USM16J48 SM16G48A,USM16G48A,SM16J48A,USM16J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off-State Voltage :VDRM=400, 600V l R.M.S On-State Current l Gate Trigger Current :IT (RMS)=16A :IGT=30mA .
RM 600 IT (RMS) ITSM I t di /dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off-State Voltage V R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 16 150 (50Hz) 165 (60Hz) 112.5 50 5 0.5 10 2 −40~125 −40~125 A A A s A / ms W W V A °C °C 2 Note 1 : VDRM=0.5×Rated ITM≤25A tgw≥10ms tgr≤250ns igp=IGT×2.0 ELECTRICAL CHARACTERISTICS (T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SM16G45 |
Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS | |
2 | SM16G45A |
Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS | |
3 | SM16G48A |
Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS | |
4 | SM16GZ47 |
Toshiba Semiconductor |
BI?DIRECTIONAL TRIODE THYRISTOR | |
5 | SM16GZ47A |
Toshiba Semiconductor |
BI?DIRECTIONAL TRIODE THYRISTOR | |
6 | SM16GZ51 |
Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS | |
7 | SM16 |
MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR | |
8 | SM16-28CXC144 |
Westcode Semiconductors |
Soft Recovery Diodes | |
9 | SM160 |
GW |
1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
10 | SM160 |
Formosa MS |
Silicon epitaxial planer type | |
11 | SM160 |
Rectron Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
12 | SM160 |
Dc Components |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |