SM16G45,SM16J45,SM16G45A,SM16J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G45,SM16J45,SM16G45A,SM16J45A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current l High Commutating (dv / dt) : IT (RMS) = 16A MAXIMUM RATINGS CHARACTERISTIC SM16G45 SM16G45A SM16J45 SM16J45A .
ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Commutation Thermal Resistance SM16G45 SM16J45 SM16G45A SM16J45A VTM VGD IH ITM = 25A VD = Rated, Tc = 125°C VD = 12V, ITM = 2A VD = 400V, (di / dt) c = − 8.7A / ms Tj = 125°C Junction to Case, AC IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (−) , Gate (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SM16G45A |
Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS | |
2 | SM16G48 |
Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS | |
3 | SM16G48A |
Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS | |
4 | SM16GZ47 |
Toshiba Semiconductor |
BI?DIRECTIONAL TRIODE THYRISTOR | |
5 | SM16GZ47A |
Toshiba Semiconductor |
BI?DIRECTIONAL TRIODE THYRISTOR | |
6 | SM16GZ51 |
Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS | |
7 | SM16 |
MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR | |
8 | SM16-28CXC144 |
Westcode Semiconductors |
Soft Recovery Diodes | |
9 | SM160 |
GW |
1.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS | |
10 | SM160 |
Formosa MS |
Silicon epitaxial planer type | |
11 | SM160 |
Rectron Semiconductor |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
12 | SM160 |
Dc Components |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |