This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operat.
- 7A, 600V, RDS(on) typ. = 0.58Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP60R650SJ SLF60R650SJ
VDSS ID
IDM VGSS
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
Gate-Source Voltage
(Note 1)
600
7 7
* 5 5
* 10 10
*
±30
EAS I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLP60R190SJ |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLP60R280SJ |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLP60R380SJ |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLP60R460SJ |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLP60R850SJ |
Maple Semiconductor |
N-Channel MOSFET | |
6 | SLP65R190SJ |
Maple Semiconductor |
N-Channel MOSFET | |
7 | SLP65R300SJ |
Maple Semiconductor |
N-Channel MOSFET | |
8 | SLP65R420SJ |
Maple Semiconductor |
N-Channel MOSFET | |
9 | SLP65R500SJ |
Maple Semiconductor |
N-Channel MOSFET | |
10 | SLP65R700SJ |
Maple Semiconductor |
N-Channel MOSFET | |
11 | SLP65R950SJ |
Maple Semiconductor |
N-Channel MOSFET | |
12 | SLP6N70U |
Maple Semiconductor |
N-Channel MOSFET |