SLP60R650SJ |
Part Number | SLP60R650SJ |
Manufacturer | Maple Semiconductor |
Description | This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching perfo... |
Features |
- 7A, 600V, RDS(on) typ. = 0.58Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP60R650SJ SLF60R650SJ
VDSS ID
IDM VGSS
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
Gate-Source Voltage
(Note 1)
600
7 7* 5 5* 10 10*
±30
EAS I... |
Document |
SLP60R650SJ Data Sheet
PDF 766.51KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SLP60R190SJ |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLP60R280SJ |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLP60R380SJ |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLP60R460SJ |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLP60R850SJ |
Maple Semiconductor |
N-Channel MOSFET |