This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has--bL7o.e6wAe,gn5a0tee0Vsch,paRerDgSce(oi(na)ttylylppy.i=cat0al.5i2lΩ5on@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching performance, and withstand hig- Fhaset nsweitrcghiyngpulse in the - 100% avalanche.
- 11A, 650V, RDS(on) typ.= 330mΩ@VGS =10 V - Low gate charge ( typical 17.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLF65R300SJ |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLF65R190SJ |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLF65R420SJ |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLF65R500SJ |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLF65R700SJ |
Maple Semiconductor |
N-Channel MOSFET | |
6 | SLF65R950SJ |
Maple Semiconductor |
N-Channel MOSFET | |
7 | SLF60R080SS |
Maple Semiconductor |
600V N-Channel MOSFET | |
8 | SLF60R190SJ |
Maple Semiconductor |
N-Channel MOSFET | |
9 | SLF60R190SS |
Maple Semiconductor |
N-Channel MOSFET | |
10 | SLF60R280SJ |
Maple Semiconductor |
N-Channel MOSFET | |
11 | SLF60R380SJ |
Maple Semiconductor |
N-Channel MOSFET | |
12 | SLF60R460SJ |
Maple Semiconductor |
N-Channel MOSFET |