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SLF60R190SS - Maple Semiconductor

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SLF60R190SS N-Channel MOSFET

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has--bL7o.e6wAe,gn5a0tee0Vsch,paRerDgSce(oi(na)ttylylppy.i=cat0al.5i2lΩ5on@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching performance, and withstand hig- Fhaset nsweitrcghiyngpulse in the - 100% avalanche.

Features

- 22A, 600V, RDS(on) typ.= 150mΩ@VGS =10 V - Low gate charge ( typical 42nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Sin.

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