SKM200GAR12E4 - Semikron International

SKM200GAR12E4 IGBT

SKM200GAR12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 313 241 200 600 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 20.

Features

• IGBT4 = 4. generation medium fast trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to 12kHz
• UL recognized, file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Inverse diode Tj = 175 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C Typical Applications
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• DC/DC
  – converter
• Brake chopper
• Switched reluctance motor Remarks
• Case temperature limited to Tc .