SKM200GAL123D - Semikron

SKM200GAL123D IGBT

Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) Values ... 123 D ... 123 D1 Units V V A A V W °C V 1200 1200 200 / 180 400 / 360 ± 20 1380 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 200 / 130 400 / 360 1450 10 500 FWD 6) 260 / 180 400 / 360 1800 24 200 SEMITRANS® M IGBT Modules SKM 200 GA 123 .

Features

• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6
* Icnom
• Latch-up free
• Fast & soft inverse CAL diodes8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology
• Large clearance (13 mm) and creepage distances (20 mm). Typical Applications: → B6 - 153
• Switching (not for linear use) Tcase = 25 °C, unless otherwise specified 2) IF =
  – IC, VR = 600 V,
  – diF/dt = 1500 A/µs, VGE = 0 V 3) Use VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RGoff =.