SKM195GB07E3 - Semikron

SKM195GB07E3 IGBT

SKM195GB07E3 SEMITRANS® 2 Trench IGBT Modules SKM195GB07E3 Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated gate resistor Typical Applications* • AC inverter drives .

Features

• VCE(sat) with positive temperature coefficient
• High short circuit capability, self limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Insulated copper baseplate using DBC Technology (Direct Copper Bonding)
• With integrated gate resistor Typical Applications
*
• AC inverter drives
• UPS
• Electronic welders
• Wind power
• Public transport Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid for Tj = 150°C
• Use of soft RG necessary GB © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = .