SKM195GAL123D - Semikron International

SKM195GAL123D IGBT Modules

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms IFSM tp = 10 ms; sin.; Tj = 150 °C I2t tp = 10 ms.

Features

• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6
* Icnom
• Latch-up free
• Fast & soft inverse CAL diodes8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology
• Large clearance (13 mm) and creepage distances (20 mm). Typical Applications:
• Switching (not for linear use)
• Brake chopper, Step-up-chopper 1) Tcase = 25 °C, unless otherwise specified 2) IF =
  – IC, VR = 600 V,
  – diF/dt = 1000 A/µs, VGE = 0 V 3) Use VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RGof.