SKM150GB12VG - Semikron International

SKM150GB12VG IGBT

SKM150GB12VG Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 222 169 150 450 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 187 140 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 774 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, .

Features

• V-IGBT = 6. Generation Trench V-IGBT (Fuji)
• CAL4 = Soft switching 4. Generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Typical Applications
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• AC inverter drives
• UPS
• Electronic welders Conditions IC = 150 A VGE = 15 V chiplevel Tj .