SKM150GB12V - Semikron International

SKM150GB12V IGBT

SKM150GB12V SEMITRANS® 2 SKM150GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Copper Bonding) • Increased power cycling capability • With integrated gate resistor • UL recognized, file no. E63532 • Lowest switching losses at High di/dt Typ.

Features

• V-IGBT = 6. Generation Trench V-IGBT (Fuji)
• CAL4 = Soft switching 4. Generation CAL-diode
• Insulated copper baseplate using DBC technology (Direct Copper Bonding)
• Increased power cycling capability
• With integrated gate resistor
• UL recognized, file no. E63532
• Lowest switching losses at High di/dt Typical Applications
*
• AC inverter drives
• UPS
• Electronic welders Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175.