SKM100GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 159 121 100 300 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 550 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t .
• V-IGBT = 6. Generation Trench V-IGBT (Fuji)
• CAL4 = Soft switching 4. Generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Tj = 175 °C
IFRM IFSM Tj Module It(RMS) Tstg Visol
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c)
Typical Applications
*
• AC inverter drives
• UPS
• Electronic welders
Conditions
IC = 100 A VGE = 15 V chiplevel Tj .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKM100GB123D |
Semikron International |
IGBT | |
2 | SKM100GB124D |
Semikron International |
IGBT | |
3 | SKM100GB125DN |
Semikron International |
IGBT | |
4 | SKM100GB128D |
Semikron International |
IGBT | |
5 | SKM100GB128DN |
Semikron International |
IGBT | |
6 | SKM100GB12F4 |
Semikron |
IGBT | |
7 | SKM100GB12T4 |
Semikron International |
IGBT | |
8 | SKM100GB12T4G |
Semikron International |
IGBT | |
9 | SKM100GB173D |
Semikron International |
IGBT | |
10 | SKM100GB176D |
Semikron International |
IGBT | |
11 | SKM100GB176DN |
Semikron International |
IGBT | |
12 | SKM100GB17E4 |
Semikron |
IGBT |